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| UNISONIC TECHNOLOGIES CO., LTD UT2327 P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2327L is P-channel enhancement mode Power MOSFET, designed in serried ranks. with fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Power MOSFET 3 2 1 SOT-23 SYMBOL 2.Drain 1.Gate *Pb-free plating product number: UT2327L 3.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating UT2327-AE3-R UT2327L-AE3-R Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel UT2327L-AE3-R (1)Packing Type (2)Package Type (3)Lead Plating (1) R: Tape Reel (2) AE3: SOT-23 (3) L: Lead Free Plating, Blank: Pb/Sn MARKING 23A Lead Plating www.unisonic.com.tw Copyright (c) 2007 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-108,A UT2327 ABSOLUTE MAXIMUM RATINGS (Ta = 25 , unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL VDS VGS Power MOSFET RATING UNITS - 20 V 12 V Ta=25 -2.6 A Continuous Drain Current (Note 3) ID Ta=70 -2.1 A Pulsed Drain Current (Note 1, 2) IDM -10 A Total Power Dissipation (Ta=25 ) 1.38 W PD Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Junction to Ambient (Note 3) SYMBOL JA MIN TYP MAX 90 UNIT /W ELECTRICAL CHARACTERISTICS (TJ=25 , unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current TJ=25 TJ=70 SYMBOL BVDSS IDSS TEST CONDITIONS VGS=0V, ID=-250uA VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS=12V Reference to 25 , ID=-1mA MIN -20 -1 -10 100 -0.1 TYP MAX UNITS V uA uA nA V/ V m m S pF pF pF ns ns ns ns nC nC nC V A A Gate-Source Leakage Current IGSS Breakdown Voltage Temperature Coefficient BVDSS/TJ ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250uA -0.5 VGS=-5V, ID=-2.8A Drain-Source On-State Resistance (Note 2) RDS(ON) VGS=-2.8V, ID=-2.0A Forward Transconductance gFS VDS=-5V, ID=-2.8A DYNAMIC CHARACTERISTICS Input Capacitance CISS VGS=0V, VDS=-6V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-ON Delay Time (Note 2) tD(ON) VDS=-15V, VGS=-10V, Turn-ON Rise Time tR ID=-1A, RG=6, RD=15 Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF Total Gate Charge (Note 2) QG VDS=-6V, VGS=-5V, ID=-2.8A Gate-Source Charge QGS Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS TJ=25 , IS=-1.6A, VGS=0V Drain-Source Diode Forward Voltage(Note2) VSD Maximum Continuous Drain-Source Diode IS VD=VG=0V, VS=-1.2V Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current (Note 1) Notes: 1. Pulse width limited by TJ(MAX) 2. Pulse width 300us, duty cycle 2%. 2 3. Surface mounted on 1 in copper pad of FR4 board; 270 /W when mounted on min. 130 190 4.4 295 170 65 5.2 9.7 19 29 5.2 1.36 0.6 10 -1.2 -1 -10 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-108,A UT2327 TYPICAL CHARACTERISTICS Fig 1. Typical Output Characteristics 5 T A = 25 4 Drain Current, ID (A) Power MOSFET Fig 2. Typical Output Characteristics 5 T A = 150 4 Drain Current, ID (A) VGS = -5V VGS = -4V VGS = -3V VGS = -5V VGS = -4V VGS = -3V 3 2 1 0 VGS = -2V 3 2 1 0 VGS = -2V 0 1 2 3 4 5 6 0 1 2 3 4 5 6 Drain-to-Source Voltage, VDS (V) Fig 3. On-Resistance vs. Gate Voltage 800 1.8 1.6 Normalized RDS(ON) Drain-to-Source Voltage, VDS (V) Fig 4. Normalized On-Resistance ID = -2.8A VGS = -5V 600 RDS(ON) () ID = -2A TA =25 1.4 1.2 1 0.8 400 200 0 0 2 4 6 8 10 0.6 -50 0 50 100 150 Gate-to-Source Voltage, VGS (V) Fig 5. Forward Characteristic of Reverse Diode Junction Temperature Tj ( ) , Fig 6. Gate Threshold Voltage vs. Junction Temperature 10 1.5 1 TJ=150 0 TJ =25 Gate Threshold Voltage, VGS(TH) (V) Continuous Source Current, IS (A) 1.0 0.5 0 0.1 0.3 0.5 0.7 0.9 1.1 Source-to-Drain Voltage VSD (V) , 1.3 0.0 -50 0 50 100 Junction Temperature, TJ ( ) 150 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-108,A UT2327 TYPICAL CHARACTERISTICS(Cont.) Fig 7. Gate Charge Characteristics 5 1000 ID = -2.8A VDS = -6V Power MOSFET Fig 8. Typical Capacitance Characteristics f=1.0MHz CISS Gate to Source Voltage, VGS (V) 4 3 2 1 0 COSS C (pF) 100 CRSS 0 2 4 Total Gate Charge, QG (nC) 6 0 1 3 5 7 9 11 Drain-to-Source Voltage,VDS (V) 13 Fig 9. Maximum Safe Operating Area Normalized Thermal Response (ja) 100 1 Fig 10. Effective Transient Thermal Impedance 10 1ms 10ms 0.1 TA =25C Single Pulse 1 10 100ms 1s DC 100 0.1 ID (A) 1 0.01 PDM t T Duty factor = t/T Peak T J = PDM x ja + Ta ja = 270 /W 0.01 0.1 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Drain-to-Source Voltage,VDS (V) Fig 11. Switching Time Waveform VDS 90% Pulse Width, t (s) Fig 12. Gate Charge Waveform VG QG -5V QGS QGD 10% VGS tD(ON) t R t D(OFF) t F Charge Q UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-108,A UT2327 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-108,A |
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